IndiumV3, Main, Repository, bibRecord, 001E69

Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain

Identifieur interne : 001E69 ( Main/Repository ); précédent : 001E68; suivant : 001E70

Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain

Auteurs : RBID : Pascal:13-0015955

Descripteurs français

Pascal (Inist)
- Courant obscurité, Bruit fond, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Superréseau, Photodiode, Mesure électrique, Dépendance température, Photoluminescence, Caractéristique courant tension, Densité courant, Mesure tension électrique, Bruit basse fréquence, Antimoniure de gallium, Diode barrière Schottky, InAs, GaSb, 8530H, 8560D.

English descriptors

KwdEn :
- 1/f noise, Background noise, Current density, Dark current, Electrical measurement, Gallium antimonides, III-V compound, III-V semiconductors, Indium arsenides, Photodiode, Photoluminescence, Schottky barrier diode, Superlattice, Temperature dependence, Voltage current curve, Voltage measurement.

Abstract

A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was fabricated, and electrical measurements under dark conditions were performed as a function of temperature. The SL structure exhibits photoluminescence emission at 4.55 μm at 77 K. Deduced from current density-voltage (J-V) measurements, a zero-bias resistance-area product R₀A greater than 1 x 10⁶ Ω cm² at 77 K was measured. Additional noise measurements show no presence of intrinsic 1/f noise above 20 Hz, and the photodiode presents Schottky-limited behavior below -600 mV. All these results confirm the potential for such SL InAs/GaSb superlattice pin photodiodes operating in the midwave infrared domain.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001472

Links to Exploration step

Pascal:13-0015955

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain</title>
<author><name sortKey="Cerveea, C" uniqKey="Cerveea C">C. Cerveea</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud (IES), UMR-CNRS 5214, Université Montpellier 2</s1>
<s2>Montpellier</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
<orgName type="university">Université Montpellier 2</orgName>
<placeName><settlement type="city">Montpellier</settlement>
<region type="region" nuts="2">Languedoc-Roussillon</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ribet Mohamed, I" uniqKey="Ribet Mohamed I">I. Ribet-Mohamed</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>ONERA, Chemin de la Hunière</s1>
<s2>91761 Palaiseau</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Palaiseau</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Taalat, R" uniqKey="Taalat R">R. Taalat</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud (IES), UMR-CNRS 5214, Université Montpellier 2</s1>
<s2>Montpellier</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
<orgName type="university">Université Montpellier 2</orgName>
<placeName><settlement type="city">Montpellier</settlement>
<region type="region" nuts="2">Languedoc-Roussillon</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Perez, J P" uniqKey="Perez J">J. P. Perez</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud (IES), UMR-CNRS 5214, Université Montpellier 2</s1>
<s2>Montpellier</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
<orgName type="university">Université Montpellier 2</orgName>
<placeName><settlement type="city">Montpellier</settlement>
<region type="region" nuts="2">Languedoc-Roussillon</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Christol, P" uniqKey="Christol P">P. Christol</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud (IES), UMR-CNRS 5214, Université Montpellier 2</s1>
<s2>Montpellier</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
<orgName type="university">Université Montpellier 2</orgName>
<placeName><settlement type="city">Montpellier</settlement>
<region type="region" nuts="2">Languedoc-Roussillon</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Rodriguez, J B" uniqKey="Rodriguez J">J. B. Rodriguez</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut d'Electronique du Sud (IES), UMR-CNRS 5214, Université Montpellier 2</s1>
<s2>Montpellier</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="région">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
<orgName type="university">Université Montpellier 2</orgName>
<placeName><settlement type="city">Montpellier</settlement>
<region type="region" nuts="2">Languedoc-Roussillon</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0015955</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 13-0015955 INIST</idno>
<idno type="RBID">Pascal:13-0015955</idno>
<idno type="wicri:Area/Main/Corpus">001472</idno>
<idno type="wicri:Area/Main/Repository">001E69</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>1/f noise</term>
<term>Background noise</term>
<term>Current density</term>
<term>Dark current</term>
<term>Electrical measurement</term>
<term>Gallium antimonides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Photodiode</term>
<term>Photoluminescence</term>
<term>Schottky barrier diode</term>
<term>Superlattice</term>
<term>Temperature dependence</term>
<term>Voltage current curve</term>
<term>Voltage measurement</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Courant obscurité</term>
<term>Bruit fond</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Superréseau</term>
<term>Photodiode</term>
<term>Mesure électrique</term>
<term>Dépendance température</term>
<term>Photoluminescence</term>
<term>Caractéristique courant tension</term>
<term>Densité courant</term>
<term>Mesure tension électrique</term>
<term>Bruit basse fréquence</term>
<term>Antimoniure de gallium</term>
<term>Diode barrière Schottky</term>
<term>InAs</term>
<term>GaSb</term>
<term>8530H</term>
<term>8560D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was fabricated, and electrical measurements under dark conditions were performed as a function of temperature. The SL structure exhibits photoluminescence emission at 4.55 μm at 77 K. Deduced from current density-voltage (J-V) measurements, a zero-bias resistance-area product R<sub>0</sub>
A greater than 1 x 10<sup>6</sup>
 Ω cm<sup>2</sup>
 at 77 K was measured. Additional noise measurements show no presence of intrinsic 1/f noise above 20 Hz, and the photodiode presents Schottky-limited behavior below -600 mV. All these results confirm the potential for such SL InAs/GaSb superlattice pin photodiodes operating in the midwave infrared domain.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0>
</fA01>
<fA02 i1="01"><s0>JECMA5</s0>
</fA02>
<fA03 i2="1"><s0>J. electron. mater.</s0>
</fA03>
<fA05><s2>41</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>2011 U.S. Workshop on the Physics and Chemistry of II-VI Materials</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>CERVEEA (C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>RIBET-MOHAMED (I.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>TAALAT (R.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>PEREZ (J. P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>CHRISTOL (P.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>RODRIGUEZ (J. B.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>SIVANANTHAN (S.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>DHAR (N. K.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>ANTER (Y.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Institut d'Electronique du Sud (IES), UMR-CNRS 5214, Université Montpellier 2</s1>
<s2>Montpellier</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>ONERA, Chemin de la Hunière</s1>
<s2>91761 Palaiseau</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St.</s1>
<s2>Chicago, IL 60607</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Defense Advanced Research Projects Agency, 3701 North Fairfax Drive</s1>
<s2>Arlington, VA 22203-1714</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>American Physical Society (APS)</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>2714-2718</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>15479</s2>
<s5>354000506838620080</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>23 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0015955</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A midwave infrared pin photodiode based on a type II InAs/GaSb superlattice (SL) was fabricated, and electrical measurements under dark conditions were performed as a function of temperature. The SL structure exhibits photoluminescence emission at 4.55 μm at 77 K. Deduced from current density-voltage (J-V) measurements, a zero-bias resistance-area product R<sub>0</sub>
A greater than 1 x 10<sup>6</sup>
 Ω cm<sup>2</sup>
 at 77 K was measured. Additional noise measurements show no presence of intrinsic 1/f noise above 20 Hz, and the photodiode presents Schottky-limited behavior below -600 mV. All these results confirm the potential for such SL InAs/GaSb superlattice pin photodiodes operating in the midwave infrared domain.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03C</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F01</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Courant obscurité</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Dark current</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Corriente obscuridad</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Bruit fond</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Background noise</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Ruido fondo</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Superréseau</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Superlattice</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Superred</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Photodiode</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Photodiode</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Fotodiodo</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Mesure électrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Electrical measurement</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Medida eléctrica</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Photoluminescence</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Photoluminescence</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Fotoluminiscencia</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Característica corriente tensión</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Densité courant</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Current density</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Densidad corriente</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Mesure tension électrique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Voltage measurement</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Bruit basse fréquence</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>1/f noise</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Ruido baja frecuencia</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Antimoniure de gallium</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium antimonides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Diode barrière Schottky</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Schottky barrier diode</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Diodo barrera Schottky</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>GaSb</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>8530H</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>8560D</s0>
<s4>INC</s4>
<s5>66</s5>
</fC03>
<fN21><s1>007</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>2011 U.S. Workshop on the Physics and Chemistry of II-VI Materials</s1>
<s2>30</s2>
<s3>Chicago, IL USA</s3>
<s4>2011-10-04</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001E69 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 001E69 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0015955
   |texte=   Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain

Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri